kw.\*:("N+ P JONCTION")
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OXYGEN PRECIPITATION EFFECTS ON SI N+-P JUNCTION LEAKAGE BEHAVIORCHAKRAVARTI SN; GARBARINO PL; MURTY K et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 581-583; BIBL. 8 REF.Article
MILLIMETER-WAVE GENERATION AT 110 GHZ BY LASER MODULATION OF A HGCDTC PHOTODIODETAUR Y; CHEUNG DT; HUFFMAN EH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 819-821; BIBL. 9 REF.Article
DEPENDENCE OF MINORITY CARRIER DIFFUSION LENGTH ON ILLUMINATION LEVEL AND TEMPERATURE IN SINGLE CRYSTAL AND POLYCRYSTALLINE SI SOLAR CELLSMATHUR PC; ARORA JD; SHARMA RP et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6949-6953; BIBL. 29 REF.Article
INVESTIGATIONS OF THE OCVD TRANSIENTS IN SOLAR CELLSCASTANER L; VILAMAJO E; LLABERIA J et al.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 10; PP. 1867-1876; BIBL. 13 REF.Article
PHOTOVOLTAIC INVESTIGATION OF MINORITY CARRIER LIFETIME IN THE HEAVILY-DOPED EMITTER LAYER OF SILICON JUNCTION SOLAR CELLCHING TAO HO.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 507-513; BIBL. 21 REF.Article
OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-DOSE ION IMPLANTED, LASER-ANNEALED SILICON SOLAR CELLSOSTOJA P; SOLMI S; ZANI A et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6208-6213; BIBL. 34 REF.Article